Theoretical and experimental investigations on the response time improvement of biased and unbiased long-wave infrared (LWIR) HgCdTe detectors operating at temperatures T = 230K were presented in this paper. MOCVD technology is an excellent tool in fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping and without post grown ex-situ annealing. Donor doping efficiency in (111) and (100) oriented HgCdTe layers has been discussed. The time constant is lower in biased detectors due to Auger suppression phenomena and reduction of diffusion capacitance related to wider depletion region. The relatively high bias currents requirements and excessive low frequency noise which reduces the detectivity of biased detectors inspire researches on the time constant improvement of unbiased detectors. The response time of high-operating temperature (HOT) LWIR HgCdTe detectors revealed complex behavior being dependent on the applied the reverse bias, the operating temperature, the absorber thickness and doping, the series resistance and the electrical area of the devices.
P. Madejczyk, W. Gawron, A. Kębłowski, P. Martyniuk, M. Kopytko, W. Pusz, D. Stępień, J. Rutkowski, A. Piotrowski, J. Piotrowski, and A. Rogalski, "Response time improvement of LWIR HOT MCT detectors," Proc. SPIE 10177, Infrared Technology and Applications XLIII, 1017719 (Presented at SPIE Defense + Security: April 11, 2017; Published: 16 May 2017); https://doi.org/10.1117/12.2261786.
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