Recently we have demonstrated a novel method of extending the cut-off wavelength of InAsSb nBn detectors, by incorporating a series of monolayers of InSb. Here we study photoluminescence and minority carrier lifetime of this InAsSb/InSb digital alloy. While increasing temperature from 15 K to 40 K we show a 14 meV blue shift of the photoluminescence peak energy and a decrease in lifetime. This deviation from the expected Varshni empirical relation indicates strong carrier localization. We contrast to photoluminescence and lifetime results in bulk InAsSb. We discuss implications of this localization for design of digital alloy InAsSb/InSb nBn detectors.
Brian J. Pepper, Alexander Soibel, David Z. Ting, Cory J. Hill, Arezou Khoshakhlagh, Anita M. Fisher, Sam A. Keo, and Sarath D. Gunapala, "Evidence of carrier localization in InAsSb/InSb digital alloy nBn detector," Proc. SPIE 10177, Infrared Technology and Applications XLIII, 101771P (Presented at SPIE Defense + Security: April 12, 2017; Published: 16 May 2017); https://doi.org/10.1117/12.2263064.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon