Single-event effects (SEEs) refer to phenomena that arise from the interaction of single energetic particles with microelectronic devices, as is experienced in harsh radiation environments. Carrier generation induced by two-photon absorption (TPA) has become a valuable tool for SEE investigations of microelectronic structures owing to its unique ability to inject carriers through the wafer, directly into well-defined locations in complex circuits. Recent effort has focused on putting the TPA SEE technique on a more quantitative basis. This paper addresses the recent successes in achieving this goal, as well as the challenges that are faced moving forward.
Dale McMorrow, Joel M. Hales, Ani Khachatrian, Stephen P. Buchner, and Jeffrey H. Warner, "Radiation effects testing via semiconductor nonlinear optics: successes and challenges," Proc. SPIE 10193, Ultrafast Bandgap Photonics II, 1019307 (Presented at SPIE Defense + Security: April 10, 2017; Published: 8 May 2017); https://doi.org/10.1117/12.2262841.
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