In0.53Ga0.47As/InP single photon avalanche detectors (SPADs) have a high photon detection efficiency in the near-IR, however the dark count rate is prohibitively high at room temperature. A nanowire-based In0.3Ga0.7As/GaAs SPAD can significantly reduce the DCR through a nearly three order of magnitude reduction in bulk InGaAs volume, as well as by reducing the indium composition for operation at 1064 nm. As a first step, we have successfully grown axial InGaAs/GaAs heterostructures using catalyst-free selective-area epitaxy. We will present the electrical characterization of a vertically oriented nanowire array InGaAs/GaAs SPADs operating at 1064 nm and use 3-dimensional modeling to aid in the analysis.
Diana L. Huffaker, Alan C. Farrell, and Xiao Meng, "Axial InGaAs/GaAs nanowire separate absorption-multiplication avalanche photodetectors (Conference Presentation)," Proc. SPIE 10193, Ultrafast Bandgap Photonics II, 101930D (Presented at SPIE Defense + Security: April 10, 2017; Published: 7 June 2017); https://doi.org/10.1117/12.2265851.5459357357001.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon