Irradiation of high resistivity p-like CdTe crystals pre-coated with an In dopant film from the CdTe side by nanosecond laser pulses with wavelength that is not absorbed by the semiconductor made it possible to directly affect the CdTe-In interface because radiation was strongly absorbed by a thin layer of the In film adjoining to the CdTe crystal. The doping mechanism was associated with the action of laser-induced stress wave which was generated under extreme conditions in the confined area at the CdTe-In interface under laser irradiation. The developed technique allowed avoiding evaporation of In dopant and resulted in the formation of the In-doped CdTe region and thus, creation of a built-in p-n junction. The temperature distribution inside the three layer CdTe-In-Water structure was calculated and correlations between the characteristics of the fabricated In/CdTe/Au diodes and laser processing conditions were obtained.
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