The large transparency window of silicon (1.1 - 8 μm wavelength range) makes it a promising material for the implementation of on-chip sensors operating over an ultra-wide wavelength range. However, the implementation of the silicon-on-insulator platform is restricted by the absorption of buried oxide layer for wavelengths above 4 μm. Here, we report our advances in development of silicon waveguides for broadband operation extending from near- to mid-infrared wavelengths. We present suspended silicon waveguides that exploit a novel periodic corrugation approach to circumvent the buried oxide absorption problem and provide effective single mode operation simultaneously for near- and mid-infrared wavelengths.
Carlos A. Alonso-Ramos, Xavier Le Roux, Daniel Benedikovic, Vladyslav Vakarin, Elena Durán-Valdeiglesias, Diego Pérez-Galacho, Eric Cassan, Delphine Marris-Morini, Pavel Cheben, and Laurent Vivien, "Mid- and near-infrared Si waveguides for sensing applications (Conference Presentation)," Proc. SPIE 10249, Integrated Photonics: Materials, Devices, and Applications IV, 102490A (Presented at SPIE Microtechnologies: May 09, 2017; Published: 16 June 2017); https://doi.org/10.1117/12.2267868.5471030927001.
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