Resonator-Quantum Well Infrared Photo detectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). Recently, we are exploring R-QWIPs for broadband long wavelength applications. To achieve the expected performance, two optimized inductively coupled plasma (ICP) etching processes (selective and non-selective) are developed. Our selective ICP etching process has a nearly infinite selectivity of etching GaAs over Ga1-xAlxAs. By using the etching processes, two format (1Kx1K and 40x40) detectors with 25 μm pixel pitch were fabricated successfully. In despite of a moderate doping of 0.5 × 1018 cm-3 and a thin active layer thickness of 0.6 or 1.3 μm, we achieved a quantum efficiency 35% and 37% for 8 quantum wells and 19 quantum wells respectively. The temperature at which photocurrent equals dark current is about 66 K under F/2 optics for a cutoff wavelength up to 11 μm. The NEΔT of the FPAs is estimated to be 22 mK at 2 ms integration time and 60 K operating temperature. This good result thus exemplifies the advantages of R-QWIP.
Jason N. Sun, Kwong-Kit Choi, Kimberley A. Olver, and Richard X. Fu, "Progress in design and fabrication of resonator quantum well infrared photodetectors (R-QWIP) (Conference Presentation)," Proc. SPIE 10249, Integrated Photonics: Materials, Devices, and Applications IV, 102490K (Presented at SPIE Microtechnologies: May 10, 2017; Published: 16 June 2017); https://doi.org/10.1117/12.2265116.5471030923001.
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