Ultrafast optical microscopy is an important tool for examining fundamental phenomena in semiconductor nanowires with high temporal and spatial resolution. Here, we used this technique to study carrier dynamics in single GaN/InGaN core−shell nonpolar multiple quantum well nanowires. We find that intraband carrier−carrier scattering is the main channel governing carrier capture, while subsequent carrier relaxation is dominated by three-carrier Auger recombination at higher densities and bimolecular recombina tion at lower densities. The Auger constants in these nanowires are approximately 2 orders of magnitude lower than in planar InGaN multiple quantum wells, highlighting their potential for future light-emitting devices.
Stephane A. Boubanga Tombet, Jeremy B. Wright, Ping Lu, Michael R. C. Williams, Changyi Li, George T. Wang, and Rohit P. Prasankumar, "Ultrafast carrier capture and Auger recombination in individual III-nitride nanowires (Conference Presentation)," Proc. SPIE 10345, Active Photonic Platforms IX, 1034505 (Presented at SPIE Nanoscience + Engineering: August 06, 2017; Published: 25 September 2017); https://doi.org/10.1117/12.2273227.5588453656001.
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