Micro chevron laser beam annealing (μCLBA) of Si film and Ge film were introduced. Single crystal stripe with a dimension of several tens to hundreds μm in length and 3-8μm in width was formed in Si film or Ge film by scanning μCLBA over the film. Main boundaries in the c-Si stripe were Σ3 CSL twin boundary. Scanning speed of micro linear laser beam annealing (μLLBA) was varied from 0.05 m/s to 8m/s to investigate its influence to crystallinity. Even at 8m/s lateral growth taken place, however, crystal quality was better for slower lateral growth. Crystallization area per energy (APE) of μLLBA was evaluated and compared with other methods. It was found APE of μLLBA was larger than other method, especially for a display with low fill factor of TFT, APE can be several orders of magnitude larger.
Wenchang Yeh, "Fabrication of single crystalline stripe in Si and Ge film on rolled flexible glass substrate by UV cw micro-chevron laser beam," Proc. SPIE 10349, Low-Dimensional Materials and Devices 2017, 103490R (Presented at SPIE Nanoscience + Engineering: August 10, 2017; Published: 25 August 2017); https://doi.org/10.1117/12.2275024.
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