Self-assembled niobium dioxide (NbO2 ) thin-film selectors self-aligned to tantalum dioxide (TaO2) memristive memory cells are studied by a multi-physics simulation of the mass transport equation coupled to the current continuity equation and heat equation. While a compact circuit model can resolve quasi-static negative differential resistance (NDR), a self-consistent coupled transport formulation provides a non-equilibrium picture of NbO2-TaO2 selector-memristor operation ab initio. By employing the drift-diffusion transport approximation, a finite element method is used to study dynamic electrothermal behavior of our experimentally obtained selector-memristor devices, showing bulk conditions exist favorable for electroformation of NbO2 selector thin-films. Simulation results suggest Poole-Frenkel defects introduce negative differential resistance, in agreement with our measured results.
John F. Sevic and Nobuhiko Kobayashi, "Multi-physics simulation of monolithic
tantalum oxide memristor-selector structures illustrating negative differential resistance (Conference Presentation)," Proc. SPIE 10349, Low-Dimensional Materials and Devices 2017, 103490Z (Presented at SPIE Nanoscience + Engineering: August 11, 2017; Published: 21 September 2017); https://doi.org/10.1117/12.2275219.5583366929001.
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