We report the development of terahertz intersubband photodetectors based on GaN/AlGaN quantum wells, covering the frequency range that is fundamentally inaccessible to existing III-V semiconductor devices due to Reststrahlen absorption. Two different approaches have been employed to mitigate the deleterious effects of the intrinsic polarization fields of nitride heterostructures: the use of suitably designed double-step quantum wells, and epitaxial growth on semipolar GaN substrates. Promising results are obtained with both approaches, which could be extended to other device applications as a way to utilize the intrinsic advantages of nitride semiconductors for THz intersubband optoelectronics.
R. Paiella, H. Durmaz, F. F. Sudradjat, D. Nothern, G. C. Brummer, W. Zhang, J. Woodward, and T. D. Moustakas, "III-nitride terahertz photodetectors for the Reststrahlen gap of intersubband optoelectronics," Proc. SPIE 10353, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2017, 103530I (Presented at SPIE Nanoscience + Engineering: August 10, 2017; Published: 29 August 2017); https://doi.org/10.1117/12.2274040.
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