The ability to integrate electronics with Nanocrystals (NCs) allows utilizing their unique properties for a future optoelectronic device. Combing top down approach using self-assembled hybrid organic-NCs systems, with bottom up components can revolutionize devices in future. In my talk I will present an ultra-high light sensing device based on InAs NCs acting as an optical gate to high electron mobility transistor (HEMT) device. Using a very narrow channel the device quantum efficiency is high as 106V/W, while the single to noise ratio (SNR) enables high sensitivity photon detection. In addition a side gate detector will be present showing enhancement in the sensitivity for light and gas detection. The same concept can be used to develop tunable, simple and flexible detector for the IR range printing semiconducting/conducting carbon nanotubes layer mixed with doped semiconductor nanocrystals.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon