Highly doped semiconductors, such as Si-doped InAsSb, are promising alternative materials for plasmonic application in the mid-infrared spectral range because they benefit from compatibility with silicon technology, from low losses and from tunable permittivity. We propose to detail what are the main advantages of InAsSb:Si compared to noble metals and how they can be used for bio-sensing applications. We demonstrate that 1-D InAsSb:Si ribbon arrays outperform 1- D gold ribbon arrays because of the latter uses little the lightning rod effect. In the case of 2-D nano-antenna arrays, it is possible to exploit a strong polarization dependent resonance to cover a large spectral range for sensing. Finally, we demonstrate that the highly doped semiconductor 1-D ribbon arrays and 2-D nano-antenna arrays allow surface plasmon resonance (SPR) sensing and surface-enhanced infrared absorption (SEIRA).
Thierry Taliercio, Fernando Gonzalez-Posada Flores, Franziska B. Barho, María José Milla-Rodrigo, Mario Bomers, Laurent Cerutti, and Eric Tournié, "Plasmonic bio-sensing based on highly doped semiconductors," Proc. SPIE 10353, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2017, 103530S (Presented at SPIE Nanoscience + Engineering: August 10, 2017; Published: 29 August 2017); https://doi.org/10.1117/12.2274303.
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