Protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, were obtained by Thermionic Vacuum Arc (TVA) method. The initial carbon layer having a thickness of 100nm has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions, each having a thickness of 40nm. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV . The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. Oxidation protection of carbon is based on the reaction between oxygen and silicon carbide, resulting in SiO2, SiO and CO2, and also by reaction involving N, O and Si, resulting in silicon oxynitride (SiNxOy) with a continuously variable composition, and on the other hand, since nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, 80% silver filled two-component epoxy-based glue ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. The experimental data show the increase of conductivity with the increase of the nitrogen content. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.
Victor Ciupina, Eugeniu Vasile, Corneliu Porosnicu, Cristian P. Lungu, Rodica Vladoiu, Ionut Jepu, Aurelia Mandes, Virginia Dinca, Aureliana Caraiane, Virginia Nicolescu, Ovidiu Cupsa, Paul Dinca, and Agripina Zaharia, "Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by TVA method," Proc. SPIE 10356, Nanostructured Thin Films X, 103560O (Presented at SPIE Nanoscience + Engineering: August 10, 2017; Published: 30 August 2017); https://doi.org/10.1117/12.2272579.
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