The spin Hall magnetoresistance is the result of the combined action of the direct and inverse spin Hall effects, and also of the Hanle effect - depolarization of spins by a transverse magnetic field. Swapping spin currents consists in the interchange of the directions of spin polarization and spin flow. Theoretical ideas and experimental results are reviewed.
M. I. Dyakonov, "Spin Hall magnetoresistance and swapping spin currents," Proc. SPIE 10357, Spintronics X, 1035702 (Presented at SPIE Nanoscience + Engineering: August 06, 2017; Published: 5 September 2017); https://doi.org/10.1117/12.2277959.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon