Photonic integration is an enabling technology for photonic quantum science, offering greater
scalability, stability, and functionality than traditional bulk optics. Here, we describe a scalable,
heterogeneous III-V/silicon integration platform to produce Si3N4 photonic circuits incorporating
GaAs-based nanophotonic devices containing self-assembled InAs/GaAs quantum dots. We
demonstrate pure single-photon emission from individual quantum dots in GaAs waveguides
and cavities - where strong control of spontaneous emission rate is observed - directly launched
into Si3N4 waveguides with > 90 % efficiency through evanescent coupling. To date, InAs/GaAs
quantum dots constitute the most promising solid state triggered single-photon sources, offering
bright, pure and indistinguishable emission that can be electrically and optically controlled.
Si3N4 waveguides offer low-loss propagation, tailorable dispersion and high Kerr nonlinearities,
desirable for linear and nonlinear optical signal processing down to the quantum level. We
combine these two in an integration platform that will enable a new class of scalable, efficient
and versatile integrated quantum photonic devices.
Marcelo I. Davanco, Jin Liu, Luca Sapienza, Chen-Zhao Zhang, Jose V. De Miranda Cardoso, Varun B. Verma, Richard P. Mirin, Sae-Woo Nam, Liu Liu, and Kartik Srinivasan, "A heterogeneous III-V/Si3N4 quantum photonic integration platform (Conference Presentation)," Proc. SPIE 10358, Quantum Photonic Devices, 103580O (Presented at SPIE Nanoscience + Engineering: August 07, 2017; Published: 3 October 2017); https://doi.org/10.1117/12.2275934.5597166566001.
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