From Event: SPIE Organic Photonics + Electronics, 2017
Direct integration of an infrared-sensing quantum dot film and an organic light-emitting diode (OLED) offers pixel-free infrared imaging. However, the infrared-to-visible conversion efficiencies of the devices are low due to the low photon-to-electron conversion efficiency of the quantum dot photodetector. Here, we report a novel vertical infrared phototransistor with 105 % external quantum efficiency (EQE). By integrating a phosphorescent OLED with this phototransistor, an infrared-to-visible up-conversion light-emitting phototransistor with an EQE over 1,000% is demonstrated. In addition, by employing a ferroelectric gate insulator for the vertical transistor, a flexible low voltage non-volatile memory is demonstrated with 10 years of retention extrapolated.
Hyeonggeun Yu and Franky So, "Vertical organic transistors for optoelectronic and ferroelectric applications (Conference Presentation)," Proc. SPIE 10364, Organic Sensors and Bioelectronics X, 103640Q (Presented at SPIE Organic Photonics + Electronics: August 07, 2017; Published: 19 September 2017); https://doi.org/10.1117/12.2272527.5581154584001.
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