From Event: SPIE Optical Engineering + Applications, 2017
GaN devices when operated at high powers are limited by excessive temperature rise in the device critical regions. Traditionally SiC, Si or sapphire substrates or homoepitaxy on GaN substrates are used for the growth of GaN device structures, however, the substrate thermal conductivity is rather limited. Diamond substrates with their ultra-high thermal conductivity offer new opportunities for achieving ultra-high power GaN electronic microwave / RF devices, and optoelectronic devices. This is presently being explored within the UK EPSRC research program GaN-DaME.
Martin Kuball, "Ultra-high power semiconductor devices: heat-sinking using GaN-on-diamond," Proc. SPIE 10378, Sixteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 103780A (Presented at SPIE Optical Engineering + Applications: August 09, 2017; Published: 6 September 2017); https://doi.org/10.1117/12.2279182.
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