From Event: SPIE Optical Engineering + Applications, 2017
Alloying of CdZnTe (CZT) with selenium has been found to be very promising and effective in reducing the overall concentration of secondary phases (Te precipitates/inclusions) and sub-grain boundary networks in the crystals. These two types of defects are the main causes for incomplete charge collection, and hence they affect the yield of high-quality CZT, resulting in a very high cost for large-volume, high-quality detector-grade CZT detectors. The addition of selenium was also found to very effective in increasing the compositional homogeneity along the growth direction of the CdZnTeSe (CZTS) ingots grown by the traveling heater method (THM) technique. The compositional homogeneity along the growth direction can enhance the overall yield of detector-grade CZTS, which should therefore be possible to produce at a lower cost compared to CZT. The electrical properties and detector performance of the CZTS crystals will be presented and discussed.
Utpal N. Roy, Giuseppe S. Camarda, Yonggang Cui, Rubi Gul, Ge Yang, Anwar Hossain, Ralph B. James, Jakub Zazvorka, Václav Dedic, Jan Franc, Vincenzo Lordi, and Joel B. Varley, "Crystal growth of CdZnTeSe (CZTS) gamma detectors: a promising alternative to CdZnTe (Conference Presentation)," Proc. SPIE 10392, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIX, 103920Y (Presented at SPIE Optical Engineering + Applications: August 09, 2017; Published: 11 October 2017); https://doi.org/10.1117/12.2276955.5606333773001.
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