From Event: SPIE Optical Engineering + Applications, 2017
The Smithsonian Astrophysical Observatory (SAO) in collaboration with SRI/Sarnoff has been engaged in a multi year effort to advance the technology of monolithic back-thinned CMOS detectors for use as X-ray imaging spectrometers. The long term goal of this campaign is to produce X-ray Active Pixel Sensor (APS) detectors with Fano limited performance over the 0.1-10keV band while incorporating the many benefits of CMOS technology. These benefits include: low power consumption, radiation “hardness”, high levels of integration, and very high read rates. Such devices would be ideal for candidate post 2020 decadal missions such as LYNX and for smaller more immediate applications such as CubeX. Devices from a recent fabrication have been back-thinned, packaged and tested for soft X-ray response. These devices have 16μm pitch, 6 Transistor Pinned Photo Diode (6TPPD) pixels with ∼135μV/electron sensitivity and a highly parallel signal chain. These new detectors are fabricated on 10μm epitaxial silicon and have a 1k by 1k format. We present details of our camera design and device performance with particular emphasis on those aspects of interest to single photon counting X-ray astronomy. These features include read noise, X-ray spectral response and quantum efficiency.
Almus Kenter, Ralph Kraft, Thomas Gauron, and Stephen Amato, "Advancing the technology of monolithic CMOS detectors for use as x-ray imaging spectrometers," Proc. SPIE 10397, UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XX, 1039703 (Presented at SPIE Optical Engineering + Applications: August 06, 2017; Published: 29 August 2017); https://doi.org/10.1117/12.2273996.
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