From Event: SPIE Optical Engineering + Applications, 2017
We review the recent progresses on the developments of a plasmonic terahertz (THz) detector and a millimeter-wave (MMW) photonic double-mixer using InP-based and/or graphene-based field effect transistors (FETs). We experimentally demonstrated the ultra-high internal responsivity of the InP-based high-electron mobility FET (HEMT) detector featured by the asymmetric dual-grating-gate structure and examined the improvement of the external responsivity by the Si-lens integration and by the array configuration. For photonic double-mixing, we experimentally verified the frequency down-conversion of an optical data signal to an IF data signal, and showed the intrinsic doublemixing performance of a G-FET exceeding that of an InP-HEMT. We also address a possibility of photonic doublemixing in the THz frequencies.
A. Satou and T. Otsuji, "Millimeter-wave/terahertz detection and photonic double-mixing by transistors," Proc. SPIE 10403, Infrared Remote Sensing and Instrumentation XXV, 104030S (Presented at SPIE Optical Engineering + Applications: August 08, 2017; Published: 30 August 2017); https://doi.org/10.1117/12.2275531.
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