In this work we investigate the high-operating temperature performance of InAsSb/AlSb heterostructure detectors with cut-off wavelengths near 5 μm at 230 K. The devices have been fabricated with different type of the absorbing layer: nominally undoped absorber, and both n- and p-type doped. The results show that the device performance strongly depends on absorber layer doping. Generally, p-type absorber provides higher values of current responsivity than n-type absorber, but at the same time also higher values of dark current. The device with nominally undoped absorbing layer shows moderate values of both current responsivity and dark current. Resulting detectivities D° of non-immersed devices varies from 2×109 to 7×109 cmHz1/2/W at 230 K, which is easily achievable with a two stage thermoelectric cooler.
Emilia Gomółka, Małgorzata Kopytko, Krystian Michalczewski, Łukasz Kubiszyn, Artur Kębłowski, Waldemar Gawron, Piotr Martyniuk, Józef Piotrowski, and Jarosław Rutkowski, "Electrical and optical performance of mid-wavelength infrared InAsSb heterostructure detectors," Proc. SPIE 10433, Electro-Optical and Infrared Systems: Technology and Applications XIV, 104330Y (Presented at SPIE Security + Defence: September 13, 2017; Published: 6 October 2017); https://doi.org/10.1117/12.2279604.
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