The re ective-mode EUV mask scanning lensless imaging microscope (RESCAN) is being developed to provide actinic mask inspection capabilities for defects and patterns with high resolution and high throughput, for 7 nm node and beyond. Here we, will report on our progress and present the results on programmed defect detection on random, logic-like patterns. The defects we investigated range from 200 nm to 50 nm size on the mask. We demonstrated the ability of RESCAN to detect these defects in die-to-die and die-to-database mode with a high signal to noise ratio. We also describe future plans for the upgrades to increase the resolution, the sensitivity, and the inspection speed of the demo tool.
Iacopo Mochi, Patrick Helfenstein, Rajendran Rajeev, Sara Fernandez, Dimitrios Kazazis, Shusuke Yoshitake, and Yasin Ekinci, "Actinic inspection of EUV reticles with arbitrary pattern design," Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 1045007 (Presented at SPIE Photomask Technology and EUV Lithography: September 12, 2017; Published: 16 October 2017); https://doi.org/10.1117/12.2280528.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon