This paper provides experimental measurements of through-focus pattern shifts between contact holes in a dense array and a surrounding pattern of lines and spaces using the SHARP actinic microscope in Berkeley. Experimental values for pattern shift in EUV lithography due to 3D mask effects are extracted from SHARP microscope images and benchmarked with pattern shift values determined by rigorous simulations.
Obert Wood, Yulu Chen, Pawitter Mangat, Kenneth Goldberg, Markus Benk, Bryan Kasprowicz, Henry Kamberian, Jeremy McCord, and Thomas Wallow, "Measurement of through-focus EUV pattern shifts using the SHARP actinic microscope," Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 1045008 (Presented at SPIE Photomask Technology and EUV Lithography: September 12, 2017; Published: 16 October 2017); https://doi.org/10.1117/12.2280371.
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