While EUV systems equipped with a 0.33 Numerical Aperture lenses are readying to start volume manufacturing, ASML and Zeiss are ramping up their activities on a EUV exposure tool with Numerical Aperture of 0.55.
The purpose of this scanner, targeting an ultimate resolution of 8nm, is to extend Moore’s law throughout the next decade.
A novel, anamorphic lens design, capable of providing the required Numerical Aperture has been investigated; This lens will be paired with new, faster stages and more accurate sensors enabling Moore’s law economical requirements, as well as the tight focus and overlay control needed for future process nodes.
The tighter focus and overlay control budgets, as well as the anamorphic optics, will drive innovations in the imaging and OPC modelling.
Furthermore, advances in resist and mask technology will be required to image lithography features with less than 10nm resolution.
This paper presents an overview of the target specifications, key technology innovations and imaging simulations demonstrating the advantages as compared to 0.33NA and showing the capabilities of the next generation EUV systems.
Jan van Schoot, Kars Troost, Frank Bornebroek, Rob van Ballegoij, Sjoerd Lok, Peter Krabbendam, Judon Stoeldraijer, Erik Loopstra, Jos P. Benschop, Jo Finders, Hans Meiling, Eelco van Setten, Bernhard Kneer, Peter Kuerz, Winfried Kaiser, Tilmann Heil, Sascha Migura, and Jens Timo Neumann, "High-NA EUV lithography enabling Moore’s law in the next decade," Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104500U (Presented at SPIE Photomask Technology and EUV Lithography: September 14, 2017; Published: 16 October 2017); https://doi.org/10.1117/12.2280592.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon