We have been developing CO2-Sn-LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies such as; combination of pulsed CO2 laser and Sn droplets, dual wavelength laser pulses shooting and mitigation with magnetic field have been developed in Gigaphoton Inc.. We have developed first practical source for HVM; “GL200E” 17) in 2014. We have proved high average power CO2 laser more than 20kW at output power cooperate with Mitsubishi electric cooperation). Pilot#1 is up running and its demonstrates HVM capability; EUV power recorded at111W average (117W in burst stabilized, 95% duty) with 5% conversion efficiency for 22hours operation in October 2016). Recently we have demonstrated, EUV power recorded at113W in burst stabilized (85W in average, 75% duty), with 5% conversion efficiency during 143hours operation. Also the Pilot#1 system recorded 64% availability and idle time was 25%. Availability is potentially achievable at 89% (2weeks average), also superior magnetic mitigation has demonstrated promising mirror degradation rate (= -0.5%/Gp) above 100W level operation with dummy mirror test) . Very low degradation (= - 0.4%/Gp) of actual collector mirror reflectance has been demonstrated above 100W level operation (in burst) with magnetic mitigation EUV source.
Hakaru Mizoguchi, Hiroaki Nakarai, Tamotsu Abe, Krzysztof M. Nowak, Yasufumi Kawasuji, Hiroshi Tanaka, Yukio Watanabe, Tsukasa Hori, Takeshi Kodama, Yutaka Shiraishi, Tatsuya Yanagida, Georg Soumagne, Tsuyoshi Yamada, Taku Yamazaki, and Takashi Saitou, "High-power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing," Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 104500Z (Presented at SPIE Photomask Technology and EUV Lithography: September 14, 2017; Published: 16 October 2017); https://doi.org/10.1117/12.2281129.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon