Source challenges have prolonged EUVL insertion into high volume chip production. Though recent years have seen much faster pace mitigation of key detractors.
In meantime ASML’s first production platform NXE3300B continues to positively support imec’s core Advanced Lithography Program and Advanced Patterning Center.
This presentation discusses source instability challenges addressed that impacted availability & power under UP2 configuration. Collector degradation caused illumination pupil pixel loss but remained within expected levels.
Long term exposure tool monitoring data indicates production sustainable capability for EUV dose variability & CDU. Lens aberration, focus & overlay issues unique to EUV addressed will also be discussed.
Vinayan Menon, Raul Pecharroman-Gallego, Lieve van Look , Eric Hendrickx, Andre van Dijk, and Tom Lathouwers, "EUV exposure tool stability at IMEC (Conference Presentation)," Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 1045015 (Presented at SPIE Photomask Technology and EUV Lithography: September 14, 2017; Published: 16 October 2017); https://doi.org/10.1117/12.2281623.5613163721001.
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