With both 193i multiple patterning and EUV technologies, the constraints on the mask manufacturability are becoming increasingly stringent. The necessity for understanding curvilinear shapes implicitly in design (for ILT and EUV) or OPC correction (corner-rounding effects) along with new multi-beam mask writing systems mean the mask manufacturers are at an inflection point: whether the mask shapes are described as curvilinear targets or complex rectilinear targets, the actual mask shapes after exposure are curvilinear and must be accounted for correctly for wafer lithography. We present a GPU-accelerated intrinsically curvilinear mask data preparation system, compatible with both VSB and multi-beam systems, that is capable of full-ship simultaneous shape and dose correction using arbitrary (non-Gaussian) kernels for model shape and dose effects.
Ryan Pearman, Abhishek Shendre, Oleg Syrel, Harold Zable, Ali Bouaricha , Mariusz Niewczas , Bo Su , Leo Pang , and Aki Fujimura, "Full-chip GPU-accelerated curvilinear EUV dose and shape correction," Proc. SPIE 10451, Photomask Technology, 1045108 (Presented at SPIE Photomask Technology and EUV Lithography: September 11, 2017; Published: 31 October 2017); https://doi.org/10.1117/12.2281686.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon