Curvilinear mask shapes have become one of the resolution enhancement technology options in optical lithography. While this technology has been demonstrated already at the 65 nm node , it becomes a more important option beyond the 14 nm node. One of the limiting factors for deploying curvilinear mask shapes for sub-14nm nodes is the need for mask process corrections (MPC). A solution for Curvilinear MPC (CLMPC) is demonstrated and discussed in this paper along with various options for the mask data preparation flows for VSB mask writers and raster based Multi-Beam mask writers. Mask Rule Check (MRC) is identified as a critical step in this data preparation flow for curvilinear shapes, and it is demonstrated that model-based MRC is a viable solution for curvilinear mask shapes.
Ingo Bork, Murali Reddy, Bhardwaj Durvasula, Nageswara Rao, Malavika Sharma, and Peter Buck, "CLMPC: curvilinear MPC in a mask data preparation flow," Proc. SPIE 10451, Photomask Technology, 1045109 (Presented at SPIE Photomask Technology and EUV Lithography: September 11, 2017; Published: 31 October 2017); https://doi.org/10.1117/12.2282502.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the conference proceedings. They include the speaker's narration along with a video recording of the presentation slides and animations. Many conference presentations also include full-text papers. Search and browse our growing collection of more than 14,000 conference presentations, including many plenary and keynote presentations.
Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon