Currently, we are supplying defect-free EUV mask for device development. This was one of the biggest challenges in the implementation of EUV lithography for high volume manufacturing (HVM). It became possible to hide all multi-layer defects by using defect avoidance technique through improvement of blank mask defectivity and development of actinic blank inspection tool. In addition, EUV pellicle is also considered as a requisite to guarantee predictable yield. Both development of mask shop tools and preparation of EUV scanner for pellicle are going well. However, still membrane needs to be much improved in terms of transmittance and robustness for HVM. At the conference, EUV mask readiness for HVM will be discussed including blank defect improvement, preparation of actinic tools and pellicle development.
Heebom Kim, Chang Young Jeong, Donggun Lee, Ji Hoon Na, Hwan-Seok Seo, Mun Ja Kim, Sung-Won Kwon, and Chan-Uk Jeon, "EUV mask readiness for HVM (Conference Presentation)," Proc. SPIE 10451, Photomask Technology, 104510I (Presented at SPIE Photomask Technology and EUV Lithography: September 12, 2017; Published: 16 October 2017); https://doi.org/10.1117/12.2280687.5613184410001.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the conference proceedings. They include the speaker's narration along with a video recording of the presentation slides and animations. Many conference presentations also include full-text papers. Search and browse our growing collection of more than 14,000 conference presentations, including many plenary and keynote presentations.
Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon