Enhancements of laser diode epitaxy in conjunction with process and packaging improvements have led to the availability of 1cm bars capable of over 500W peak power at near-infrared wavelengths (770nm to 1100nm). Advances in cooler design allow for multi-bar stacks with bar-to-bar pitches as low as 350μm and a scalable package architecture enabled a single diode assembly with total peak powers of over 1MegaWatt of peak power. With the addition of micro-optics, overall array brightness greater than 10kW/cm2 was achieved. Performance metrics of barbased diode lasers specifically engineered for high peak power and high brightness at wavelengths and pulse conditions commonly used to pump a variety of fiber and solid-state materials are presented.
D. Crawford, P. Thiagarajan, J. Goings, B. Caliva, S. Smith, and R. Walker, "Advancements of ultra-high peak power laser diode arrays," Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 105140H (Presented at SPIE LASE: January 30, 2018; Published: 19 February 2018); https://doi.org/10.1117/12.2294046.
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