High-power, high-brightness diode lasers have been pursued for many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, ~915 nm – and ~976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. As a result, there have been many technical thrusts for driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, nLIGHT element®. In the past decade, the power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brightness and the development of techniques for efficiently coupling multiple emitters. In this paper, we demonstrate further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report record 315 W output from a 2×12 nLIGHT element with 105 μm diameter fiber using x-REM diodes and these diodes will allow next generation of fiber-coupled product capable of 250W output power from 105 μm/0.15 NA beam at 915 nm.
M. Kanskar, L. Bao, Z. Chen, D. Dawson, M. DeVito, W. Dong, M. Grimshaw, X. Guan, M. Hemenway, R. Martinsen, W. Urbanek, and S. Zhang, "Improvement in reduced-mode (REM) diodes enable 315 W from 105-µm 0.15-NA fiber-coupled modules," Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 105140L (Presented at SPIE LASE: January 30, 2018; Published: 19 February 2018); https://doi.org/10.1117/12.2289146.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon