This paper reports a DBR High Power Diode Laser (DBR-HPDL) realization, emitting up to 10W in the 920 nm range. High spectral purity (90% power in about 0.5 nm), and wavelength stability versus injected current (about 5 times more than standard FP laser) candidates DBR-HPDL as a suitable device for wavelength stabilized pump source, and high brightness applications exploiting Wavelength Division Multiplexing. Key design aspect is a multiple-orders Electron Beam Lithography (EBL) optical confining grating, stabilizing on same wafer multiple wavelengths by a manufacturable and reliable technology. Present paper shows preliminary demonstration of wafer with 3 pitches, generating DBRHPDLs 2.5 nm spaced.
R. Paoletti, S. Codato, C. Coriasso, P. Gotta, G. Meneghini, G. Morello, P. De Melchiorre, E. Riva, M. Rosso, A. Stano, and M. Gattiglio, "Wavelength stabilized DBR high power diode laser using EBL optical confining grating technology," Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 105140V (Presented at SPIE LASE: January 30, 2018; Published: 19 February 2018); https://doi.org/10.1117/12.2290287.
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