We report on the simulation of cavity-dumped semiconductor disk lasers utilizing an intracavity Pockels cell. This technique is used to generate high peak power pulses with pulse lengths of nominally one cavity round-trip. These results are compared to experiments demonstrated using InGaAs quantum-well gain region operating at approximately 1 μm to generate micro-Joule level nanosecond pulses.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon