We have demonstrated the suppression of ablation rate on a silicon surface irradiated by a double-pulse beam with two color laser in time delays of Δt = -900 - 900 ps. The double pulse beam consists of 810nm with 40fs pulse and 405nm with > 40fs pulse. The fundamental-pulse fluence F810 is kept below ablation threshold (Fth, 810nm = 0.190 J/cm2 ) while the second harmonic pulse fluence F405 are kept above the ablation threshold (Fth, 405nm = 0.050 J/cm2 ). We find that ablation rate of silicon is drastically decreased at delay times of 600ps.
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