An analytical model for operating characteristics of a novel type of semiconductor lasers, quantum dot (QD) lasers with asymmetric barrier layers (ABLs), is discussed. In such lasers, the ABLs (one on each side of the active layer with QDs) should ideally keep the electron-injecting side of the structure completely devoid of holes and the hole-injecting side devoid of electrons thus eliminating the parasitic electron-hole recombination there. In actual structures, however, the ABLs will only partly fulfill this function; as a result, there will be a certain fraction of electrons on the hole-injecting side and holes on the electron-injecting side and, hence, the parasitic electron-hole recombination will still occur outside QDs in addition to the useful electron-hole recombination in QDs. In this work, the effect of non-ideality of ABLs on threshold and high-power characteristics of ABL QD lasers is theoretically studied. The extent, to which the laser operating characteristics are affected, is quantified by deriving and analyzing closed-form expressions for the threshold current density, characteristic temperature, internal differential quantum efficiency, and output optical power as functions of non-ideality of ABLs. Approaches for optimizing the ABL QD lasers performance are discussed.
Levon V. Asryan, "Operating characteristics of quantum-dot lasers with asymmetric barrier layers (Conference Presentation)," Proc. SPIE 10526, Physics and Simulation of Optoelectronic Devices XXVI, 1052604 (Presented at SPIE OPTO: January 29, 2018; Published: 14 March 2018); https://doi.org/10.1117/12.2291234.5751404165001.
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