Directly-modulated lasers remain excellent candidates for the development of efficient and low-cost short communication links. While the modulation bandwidth of semiconductor lasers is inherently limited by the relaxation oscillations due carrier-photon interaction, it is possible to further enhance the modulation dynamics by using nonlinear architectures. Our recent studies has revealed the high potential of the optically injection-locked semiconductor laser operating under gain lever effect. Modulation bandwidth as large as 85 GHz namely four times larger than that of the free-running semiconductor laser has been unveiled. In this work, we numerically investigate the large-signal capabilities of this transmitter by evaluating eye diagrams and bit error rates. The results confirm its high potential for short communication links operating at high-speeds.
J.-M. Sarraute, K. Schires, S. LaRochelle, and F. Grillot, "Large-signal capabilities of an optically injection-locked semiconductor laser using gain lever," Proc. SPIE 10526, Physics and Simulation of Optoelectronic Devices XXVI, 105260F (Presented at SPIE OPTO: January 30, 2018; Published: 23 February 2018); https://doi.org/10.1117/12.2290649.
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