A fraction of a SiNx mono-layer is formed on a GaN layer by exposing the surface to a Si flux. When the sample is heated under vacuum at high temperature (900°C), we observe the sublimation of GaN in the regions uncovered by the thermally resistant SiNx mask. This selective area sublimation (SAS) process can be used for the formation of nanopyramids and nanowires with a diameter down to 4 nm. Also, if InGaN quantum wells are included in the structures before sublimation, InGaN quantum disks with quasi identical sizes in the 3 dimensions of space can be formed using SAS.
Benjamin Damilano, Stéphane Vézian, Sébastien Chenot, Marc Portail, Blandine Alloing, Julien Brault, Aimeric Courville, Virginie Brändli, Mathieu Leroux, and Jean Massies, "Selective area sublimation of GaN for top-down fabrication of nanostructures (Conference Presentation)," Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105320F (Presented at SPIE OPTO: January 30, 2018; Published: 14 March 2018); https://doi.org/10.1117/12.2291935.5751530605001.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon