In this paper the properties of excitons and phonons in doped GaN is reviewed. We demonstrate that in heavy Ge doped GaN new quasi particle can be stabilized. Furthermore, we discuss and use the observation of local phonon modes to clarify the incorporation of germanium, silicon, carbon, and transition metal ions on different lattice places in the nitride material.
Axel Hoffmann, Christian Nenstiel, Markus Wagner, Felix Nippert, Gordon Callsen, Nadja Jankowski, Armin Dadgar, and Stacia Keller, "Optical properties of doped GaN (Conference Presentation)," Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105320M (Presented at SPIE OPTO: January 30, 2018; Published: 14 March 2018); https://doi.org/10.1117/12.2293824.5751536422001.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon