The internal quantum efficiency (IQE) is a key property of light-emitting semiconductor structures. We critically review the most popular methods for determining the IQE. In particular, we discuss the impact of low- temperature non-radiative recombination on temperature-dependent CW photoluminescence measurements. Using temperature-dependent time-resolved photoluminescence we establish a method to verify 100 % IQE at low temperature and thus to obtain absolute internal quantum efficiencies at all temperatures.
Andreas Hangleiter, Torsten Langer, Philipp Henning, Fedor Alexej Ketzer, Heiko Bremers, and Uwe Rossow, "Internal quantum efficiency of nitride light emitters: a critical perspective," Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105321P (Presented at SPIE OPTO: February 01, 2018; Published: 23 February 2018); https://doi.org/10.1117/12.2290082.
Conference Presentations are recordings of oral presentations given at SPIE conferences and published as part of the conference proceedings. They include the speaker's narration along with a video recording of the presentation slides and animations. Many conference presentations also include full-text papers. Search and browse our growing collection of more than 12,000 conference presentations, including many plenary and keynote presentations.