In this study, a highly conductive and transparent AlN–based glass electrode, fabricated by either DC or AC-pulse-based electrical breakdown processes, is introduced, and applied to AlGaN–based UV-A and UV-C light-emitting diodes with p-AlxGa1-xN contact layers (x = 0.05, 0.1, 0.4). This AlN–based glass electrode with a conducting filament exhibited high transmittance in the deep-UV region (over 95.6 % at 280 nm) and low contact resistance with a p-Al0.4Ga0.6N layer (ρc = 3.2 × 10-2 Ω·cm2). The ohmic conduction mechanism at the interface between the AlN film and p-Al0.4Ga0.6N layers was then examined using various analytical tools. One of the 280-nm top-emitting LEDs with the AlN-based glass electrodes operated stably with a forward voltage of 7.7 V at 20 mA and a light-output power of 7.49 mW at 100 mA after packaging. The external quantum efficiency was measured to be a record-high 2.8. This report is the first demonstration of top emission from DUV LEDs, and the proposed method may be used extensively in various areas of optoelectronic devices and sensors.
Tae Geun Kim, Tae Ho Lee, Tae Hoon Park, Byeong Ryong Lee, and Kyung Rock Son, "Highly-efficient top-emitting UV A-to-C LEDs using AlN-based glass electrodes (Conference Presentation)," Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 1053222 (Presented at SPIE OPTO: February 02, 2018; Published: 14 March 2018); https://doi.org/10.1117/12.2285988.5751523653001.
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