The monoclinic beta-Ga2O3 has a wide bandgap of ~4.9 eV and can be grown from melt, making it attractive for electronics applications. In order to use its potential for devices various aspects related to doping have to be understood. This talk will focus first on using first-principle calculations to obtain information on formation energies and electronic structure of group-IV dopants and transition metal compensation doping in beta-Ga2O3. Particular aspects like the contribution of antisites, electron trapping to the activation energies seen in Hall measurements, and magnetism will be discussed. The second part of the talk will present modeling of polarons based on first-principle electron-phonon coupling.
Catalin Badescu, Daniel Hashemi, Jonghoon J Lee, and Jacob P Tavenner, "Doping of beta-gallium-oxide (Conference Presentation)," Proc. SPIE 10533, Oxide-based Materials and Devices IX, 1053306 (Presented at SPIE OPTO: January 28, 2018; Published: 14 March 2018); https://doi.org/10.1117/12.2295970.5751536456001.
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