In this talk, we provide an overview overview of our work on beta-Ga2O3 growth, doping, heterostructures and devices. In plasma-assisted MBE growth of beta-Ga2O3 we demonstrate the differences in growth on cleavage (e.g., (100) vs. non-cleavage planes (e.g., (010) or (001)), the propensity for growth rate limitations by suboxide formation. We demonstrate unintentional doping concentration in the mid10E15 cm-3 range, and controllable intentional doping with electron concentrations from 10E16 to >10E20 cm-3. We review the development and characterization of coherent (Al,Ga)2O3/Ga2O3 heterostructures and demonstration of modulation doping and MODFETs.
James S. Speck, "Progress in beta-gallium-oxide materials and devices (Conference Presentation)," Proc. SPIE 10533, Oxide-based Materials and Devices IX, 1053307 (Presented at SPIE OPTO: January 28, 2018; Published: 14 March 2018); https://doi.org/10.1117/12.2292778.5751516200001.
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