A self-aligned dry etching method was proposed and verified theoretically to enhance the magnitude and simultaneously improve the uniformity of the tensile strain in a germanium (Ge) wave-guide (WG), with the help of tensile-stressed SiN stressor at the WG sidewalls. The SiN-strained germanium-on-insulator (GOI) WG was also experimentally demonstrated. Significant tensile strain was observed in the Ge material via micro-Raman measurements. This method could potentially facilitate a Ge photodetector with its optical detection range extended further towards longer wavelength and to be comparable with that of state-of-the-art InGaAs detectors.
Yiding Lin, Danhao Ma, Kwang Hong Lee, Jurgen Michel, and Chuan Seng Tan, "A self-aligned dry etching method for mechanical strain enhancement of germanium and its uniformity improvement for photonic applications," Proc. SPIE 10537, Silicon Photonics XIII, 1053704 (Presented at SPIE OPTO: January 29, 2018; Published: 22 February 2018); https://doi.org/10.1117/12.2288154.
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