We introduce our 200 mm Si-SiN photonics platform for high-speed and energy-efficient optical transceiver. We present the fabrication process as well as wafer level characterizations in the O-band of Si and SiN photonic components such as waveguides, grating fiber couplers and Si-SiN interlayer adiabatic transitions. We demonstrate a low thermo-optic coefficient of the SiN layer and a large optical bandwidth for the hybrid Si-SiN photonic devices. This enhanced Si-SiN platform is of great importance for the realization of CWDM transceivers for which low temperature sensitivity and large bandwidth are needed.
Q. Wilmart, D. Fowler, C. Sciancalepore, K. Hassan, S. Plantier, L. Adelmini, S. Garcia, D. Robin-Brosse, S. Malhouitre, and S. Olivier, "A hybrid SOI/SiN photonic platform for high-speed and temperature-insensitive CWDM optical transceivers," Proc. SPIE 10537, Silicon Photonics XIII, 1053709 (Presented at SPIE OPTO: January 29, 2018; Published: 22 February 2018); https://doi.org/10.1117/12.2289633.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon