The rapid evolution of the silicon photonics platform has delivered a whole series of photonic integrated components and circuits, generating a critical need for on-chip power increase and preservation. In this paper, we present the design, fabrication and experimental evaluation of an InP-based electrically injected photonic crystal (PhC) nanoamplifier integrated on SOI waveguide circuitry for intra-chip communications. The principle of the device is based on the use of 2D line defect PhC waveguides made of InP-based materials, which are coupled to the SOI waveguide through optimized highly efficient adiabatic mode transformers. The InP-based slab incorporating a 400nm PIN junction, with 4 InGaAsP quantum wells emitting around 1.3µm, is drilled with PhCs so as to form a single mode waveguide at the operating wavelength. Die-to-die adhesive bonding of the InP heterostructure on SOI is performed and the nanoamplifiers are structured in the III-V layers using 2 levels of electron beam lithography followed by inductively coupled plasma etching. Through proper positioning of the metallic contacts on the sides of the structure, this particular electro-optical configuration allows for the efficient electrical injection of electron-hole pairs without inducing large optical losses. Specific efforts were made as well, so as to optimize the stimulated emission efficiency. The device operates at room temperature in a continuous wave regime at the 1.3μm window and exhibits a diode voltage threshold of around 0.6V. Detailed performance analysis of the device is presented.
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