At least four groups have demonstrated GeSn direct bandgap material and shown cryogenic temperature lasers under optical pumping. With up to 16% of Sn, our lasers operate up to 180K and lase up to wavelengths of 3.1 um.
We will describe our efforts to reduce the threshold, increase the operating temperature, and evolve towards electrical pumping in these lasers.Thes efforts involve improvements of epi growth, electrical passivation, doping, heterostructures, strain control...
Alexei Chelnokov, Nicolas Pauc, Jauris Aubin, Quang Minh Thai, Laurent Milord, Mathieu Bertrand, Alban Gassenq, Kevin Guilloy, Thomas Karl-Heinz Zabel, Hans Sigg, Jean-Michel Hartmann, Vincent Calvo, and Vincent Reboud, "GeSn lasers for mid-infrared silicon photonics (Conference Presentation)," Proc. SPIE 10537, Silicon Photonics XIII, 105370S (Presented at SPIE OPTO: January 31, 2018; Published: 14 March 2018); https://doi.org/10.1117/12.2290687.5751508512001.
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Study of self-shadowing effect as a simple means to realize nanostructured thin films and layers with special attentions to birefringent obliquely deposited thin films and photo-luminescent porous silicon