The III-V semiconductor AlGaAs is an ideal material for nonlinear optics. It has large second and third order nonlinearities, a low two-photon absorption coefficient at the half band gap and allows for the easy fabrication of integrated optical devices. In addition, AlGaAs can be used to directly integrate photodiodes, modulators and passive optical elements on the same chip as the nonlinear elements. This talk will highlight the benefits of this nonlinear material for the generation of entangled photon states using both spontaneous down conversion and spontaneous four wave mixing.
Stewart J. Aitchison, "Entangled photon generation in AlGaAs waveguides (Conference Presentation)," Proc. SPIE 10540, Quantum Sensing and Nano Electronics and Photonics XV, 1054029 (Presented at SPIE OPTO: February 01, 2018; Published: 14 March 2018); https://doi.org/10.1117/12.2289449.5751529764001.
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