In this work, we investigated the effects of phosphorus ions implantation on InAs/GaAs QDs by varying the fluences from 8× 1011 to 1×1013 ions/cm2 at a fixed energy of 50 keV. Temperature dependent photoluminescence (PL) study shows a suppression of emission efficiency with the increase of fluence of implanted ions, attributed to the generation of defects/dislocations near around QDs acting as trapping centers for photocarriers. All the implanted samples demonstrated degradation in activation energy from 184 meV (as-grown) to 73 meV (highest fluence sample) indicating weaker carrier confinement in QDs. Implantation also resulted 40 nm blue shift in PL emission wavelength which is caused due to the atomic intermixing between QDs and surrounding materials. Rocking curves plotted from the double crystal X-ray diffraction study, depict a vanishing trend of satellite peaks with the increase of fluence of implanted ions, resulting from the loss of interface sharpness due to interdiffusion.
S. Upadhyay, A. Mandal, V. Chavan, N. B. V. Subrahmanyam, P. Bhagwat, and S. Chakrabarti, "Impact of phosphorus ion implantation on the material and optical properties of InAs/GaAs quantum dots," Proc. SPIE 10543, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, 1054309 (Presented at SPIE OPTO: January 30, 2018; Published: 21 February 2018); https://doi.org/10.1117/12.2289543.
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