In recent years, lots of attentions have been paid to micro-LED based display technology. For next-generation display applications, micro-LED-display is expected to be more efficient, having larger color gamut, much brighter and very flexible. What’s more, the micro LED display technology could allow the integration of circuit and sensors for much higher refresh rate and fingerprint identification.
However, there are still many challenges need to be overcome before an ideal micro-LED-display can be demonstrated. Making a micro-LED-display involves two major processing works: one is to make an array of very small LED chip with very good uniformity on wavelength and brightness; while the other one is to transfer this LED array to a display backplane with very high yield and low cost.
To make a highly uniform micro-LED chip array, it is critical to have a uniform LED wafer since the binning of micro LED chips is not possible. In this work, a highly uniform 6 inch wafer suitable for micro-LED-display will be demonstrated. The percentage of wafer usage will be calculated. On the other hand, micro-LED chips with low leakage current level and good crystal quality are fabricated based on this wafer. After applying mass transfer process to the wafer, a high brightness, high efficiency RGB micro-LED-display with driver will also be demonstrated.
Yun-Li Li, Tzu-Yang Lin, and Yu-hung Lai, "Development and progress of micro LED display technology (Conference Presentation)," Proc. SPIE 10554, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, 1055402 (Presented at SPIE OPTO: January 29, 2018; Published: 14 March 2018); https://doi.org/10.1117/12.2296337.5751479217001.
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